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HAT2132H
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0177-0300 Rev.3.00 Dec 07, 2006
Features
* Low drive current. * Low on-resistance * Low profile
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK )
5 D 5 4
4 G 3 12
1, 2, 3 4 5
Source Gate Drain
SSS 123
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. STch = 25C, Tch 150C Symbol VDSS VGSS ID ID(pulse) IDR IDR(pulse) Note1 IAP Note3 EAR Note3 Pch Note2 ch-c Tch Tstg
Note1
Ratings 200 30 6 24 6 24 6 2.4 20 6.25 150 -55 to +150
Unit V V A A A A A mJ W C/W C C
Rev.3.00 Dec 07, 2006 page 1 of 6
HAT2132H
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 200 -- -- 3.0 2.7 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 4.7 0.36 450 65 13 19 26 48 9 12.5 2.5 6 0.85 95 Max -- 1 0.1 4.0 -- 0.45 -- -- -- -- -- -- -- -- -- -- 1.30 -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns Test conditions ID = 10 mA, VGS = 0 VDS = 200 V, VGS = 0 VGS = 30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 3 A, VDS = 10 V Note4 ID = 3 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 3 A VGS = 10 V RL = 33.3 Rg = 10 VDD = 160 V VGS = 10 V ID = 6 A IF = 6 A, VGS = 0 Note4 IF = 6 A, VGS = 0 diF/dt = 100 A/s
Rev.3.00 Dec 07, 2006 page 2 of 6
HAT2132H
Main Characteristics
Power vs. Temperature Derating
40 100 30
10
Maximum Safe Operation Area
Pch (W)
ID (A)
30
10 3 1 0.3 0.1 0.03
10
1
PW = 10
0
s
s
m s
Channel Dissipation
Drain Current
20
10
Operation in this area is limited by RDS (on)
D C (T Op c era = 25 tion C )
1 s( m
) ot Sh
0
0
50
100
150
200
Ta = 25C 0.01 0.1 0.3 1 3
10 30
100 300 1000
Case Temperature
Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
10 10 V 10
Typical Transfer Characteristics
VDS = 10 V Pulse Test
(A)
(A) ID
6V
8V 8 6.5 V
Pulse Test 8
ID
6
6
Drain Current
4 5.5 V 2 VGS = 5 V 0 0 4 8 12 16 20
Drain Current
4 Tc = 75C 25C -25C 0 0 2 4 6 8 10
2
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Pulse Test 8
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source on State Resistance RDS (on) ()
10 Pulse Test 5
Drain to Source Saturation Voltage VDS (on) (V)
10
6 ID = 8 A 5A 2A 0 0 4 8 12 16 20
2 1 0.5 VGS = 10 V, 15 V
4
2
0.2 0.1 0.1 0.2 0.5 1
2
5 10 20
50 100
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.3.00 Dec 07, 2006 page 3 of 6
HAT2132H
Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance |yfs| (S)
2.5 VGS = 10 V Pulse Test 2.0
100 VDS = 10 V Pulse Test 30 Tc = -25C 10 3 1 0.3 0.1 0.1
1.5 ID = 8 A 5A
25C 75C
1.0
0.5
2A
0 -40
0
40
80
120
160
0.3
1
3
10
30
100
Case Temperature
Tc
(C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
5000 2000 VGS = 0 f = 1 MHz Ciss
Body-Drain Diode Reverse Recovery Time
1000
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
1000 500 200 100 50 20 10 5 0 20 40 60 80 100 Crss Coss
200 100 50
20 10 0.1
di / dt = 100 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30 100
Reverse Drain Current
IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
VDS (V)
VGS (V)
400
ID = 6 A VDD = 50 V 100 V 160 V VGS
16
1000 300 100 30 10 3 1 0.1 td(on) tr tf VGS = 10 V, VDD = 100 V PW = 10 s, duty 1 % Rg = 10 td(off)
300
12
Drain to Source Voltage
200
VDS
8
100
VDD = 160 V 100 V 50 V 0 20 40 60 80
4
0
0 100
Gate to Source Voltage
Switching Time t (ns)
0.2
0.5
1
2
5
10
Gate Charge
Qg (nc)
Drain Current
ID (A)
Rev.3.00 Dec 07, 2006 page 4 of 6
HAT2132H
Reverse Drain Current vs. Source to Drain Voltage
10
Gate to Source Cutoff Voltage VGS (off) (V)
Gate to Source Cutoff Voltage vs. Case Temperature
5 VDS = 10 V ID = 10 mA 1 mA
Reverse Drain Current IDR (A)
8
4
6
3 0.1 mA
4 10 V 5V
VGS = 0
2
2
1
Pulse Test 0 0 0.4 0.8 1.2 1.6 2.0
0 -40
0
40
80
120
160
Source to Drain Voltage
VSD (V)
Case Temperature
Tc (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
ch - c (t) = s (t) * ch - c ch - c = 6.25C/W, Tc = 25C PDM D= PW T 1m 10 m 100 m 1 10 PW T
0.05
0.03
0.02 1 0.0
1s
0.01 10
t ho
pu
lse
100
Pulse Width PW (S)
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor 10 D.U.T. RL
Vout Monitor Vin Vout 10% 10%
90%
10%
Vin 10 V
VDD = 100 V td(on)
90% tr
90% td(off) tf
Rev.3.00 Dec 07, 2006 page 5 of 6
HAT2132H
Package Dimensions
Package Name LFPAK JEITA Package Code SC-100 RENESAS Code PTZZ0005DA-A Previous Code LFPAKV MASS[Typ.] 0.080g
Unit: mm
4.9 5.3 Max 4.0 0.2 5
0.25 -0.03
+0.05
3.3
1.0
3.95
1
4
6.1 -0.3
+0.1
0 - 8
1.1 Max +0.03 0.07 -0.04
0.75 Max 1.27 0.10 0.40 0.06
0.25 M
0.6 -0.20 1.3 Max
+0.25
0.20 -0.03
+0.05
(Ni/Pd/Au plating)
Ordering Information
Part No. HAT2132H-EL-E Quantity 2500 pcs Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 Dec 07, 2006 page 6 of 6
4.2
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.0

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